inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRFS650A features avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area description designed for use in switch mode power supplies and general purpose applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter value unit v dss drain-source voltage 200 v v gs gate-source voltage-continuous 30 v i d drain current-continuous 15.8 a i dm drain current-single pluse 112 a p d total dissipation @t c =25 50 w t j max. operating junction temperature -55~150 t stg storage temperature -55~150 symbol parameter max unit r th j-c thermal resistance, junction to case 2.51 /w r th j-a thermal resistance, junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRFS650A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 200 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 7.9a 0.085 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 200v; v gs = 0 v ds = 160v; v gs = 0; t j = 125 10 100 a v sd forward on-voltage i s = 15.8a; v gs = 0 1.5 v pdf pdffactory pro www.fineprint.cn
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